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04
2025
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08
Xi'an Jiaotong University Achieves Significant Progress in the Field of High-Performance Optoelectronic Sensor Devices
Small and micro intelligent sensors play a critical role in the online monitoring, condition analysis, and fault diagnosis of power equipment, serving as the key foundational building blocks for enabling comprehensive sensing, intelligent decision-making, and real-time control in next-generation power systems. Emerging two-dimensional materials—such as graphene and transition metal dichalcogenides—possess unique characteristics, including atomic-level thickness, strong light-matter interactions, and tunable bandgaps. Micro- and nanoscale sensors based on these 2D photosensitive materials offer significant advantages, such as high detection reliability, compact size, and ultra-low power consumption, making them highly promising for optical sensing applications in power equipment. However, due to their inherently small absorption cross-sections and limited photoelectric conversion efficiency, leveraging the grating voltage principle to achieve photoelectric amplification inevitably leads to trade-offs in response bandwidth, severely hindering charge carrier mobility and device response speed—and ultimately placing substantial constraints on further optimizing overall光电 performance.
In response to the above issue, Professor Meng Guodong’s team from the School of Electrical Engineering and the National Key Laboratory of Electrical Insulation and Materials for Power Systems at Xi'an Jiaotong University, in collaboration with Professor Zongyou Yin’s team from the Australian National University, has developed a novel high-performance ferroelectric-gate-controlled field-effect optoelectronic transistor. This device uses aluminum-doped hafnium oxide (Al:HfO2) nanoferroelectric films as the gate dielectric layer and WS2/graphene two-dimensional heterostructures as the channel material.
First, by leveraging defect engineering introduced through ferroelectric floating gates and the tunneling effect modulated via localized field enhancement, we simultaneously extended the lifetime of photogenerated carriers while suppressing their transit time. This approach effectively addresses the trade-off between optical gain and response bandwidth—a common challenge in grating-gate devices—leading to a significant improvement in both detection efficiency and response speed.
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