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04

2025

-

08

Baolong Technology: Smart Sensors Can Be Applied to Robotics

By tuning the non-volatile remanent polarization field, the ferroelectric-enhanced electrostatic doping effect effectively suppresses Fermi-level pinning, enabling Schottky-Mott limit contact and significantly improving carrier mobility efficiency.

By leveraging defect engineering introduced through ferroelectric floating gates and locally enhanced tunneling effects, the device not only extends the lifetime of photogenerated carriers but also effectively suppresses carrier transit time. This approach successfully addresses the common trade-off between optical gain and response bandwidth typically encountered in grating-gate devices, significantly boosting both the detector's efficiency and response speed.

Furthermore, by tuning the non-volatile remanent polarization field, we achieve an enhanced ferroelectric-induced electrostatic doping effect, which effectively suppresses Fermi-level pinning, enabling Schottky-Mott limit contact and significantly boosting carrier mobility. This approach facilitates selective p-type doping and bipolar transport in transistors.


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